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MBD330DWT1 PDF预览

MBD330DWT1

更新时间: 2024-11-23 03:50:11
品牌 Logo 应用领域
ETL 二极管
页数 文件大小 规格书
5页 546K
描述
Dual SCHOTTKY Barrier Diodes

MBD330DWT1 数据手册

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Dual SCHOTTKY Barrier Diodes  
Application circuit designs are moving toward the consolidation of  
device count and into smaller packages. The new SOT–363 package is  
a solution which simplifies circuit design, reduces device count, and  
reduces board space by putting two discrete devices in one small six–  
leaded package. The SOT–363 is ideal for low–power surface mount  
applications where board space is at a premium, such as portable  
products.  
MBD110DWT1  
MBD330DWT1  
MBD770DWT1  
6
5
4
Surface Mount Comparisons:  
SOT–363  
SOT–23  
7.6  
2
1
2
3
Area (mm )  
4.6  
120  
2
Max Package P D (mW)  
Device Count  
225  
1
SOT–363  
CASE 419B–01, STYLE 6  
Space Savings:  
Package  
1 × SOT–23  
40%  
2 × SOT–23  
70%  
Cathode  
6
N/C  
5
Anode  
4
SOT–363  
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular  
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed  
for high–efficiency UHF and VHF detector applications. Readily available to many other  
fast switching RF and digital applications.  
1
2
3
• Extremely Low Minority Carrier Lifetime  
Anode  
N/C Cathode  
• Very Low Capacitance  
• Low Reverse Leakage  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MBD110DWT1  
MBD330DWT1  
MBD770DWT1  
V R  
7.0  
30  
Vdc  
70  
Forward Power Dissipation  
T A = 25°C  
P F  
120  
mW  
Junction Temperature  
Storage Temperature Range  
T J  
–55 to +125  
–55 to +150  
°C  
°C  
T stg  
DEVICE MARKING  
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5  
Thermal Clad is a trademark of the Bergquist Company.  
MBD110–1/5  

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