Datasheet > MBD330DWT1

MBD330DWT1

更新时间： 2024-11-25 22:30:03

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
8页	73K
描述
Dual Schottky Barrier Diodes

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数据手册
替代型号

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MBD330DWT1 数据手册

ON Semiconductort

MBD110DWT1

MBD330DWT1

MBD770DWT1

Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT–363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small

six–leaded package. The SOT–363 is ideal for low–power surface

mount applications where board space is at a premium, such as

portable products.

ON Semiconductor Preferred Devices

Surface Mount Comparisons:

SOT–363

SOT–23

CASE 419B–01, STYLE 6

SOT–363

Area (mm )

4.6

120

7.6

225

Max Package P (mW)

Device Count

Space Savings:

Package

Anode 1

N/C 2

6 Cathode

1 ꢀ SOT–23

2 ꢀ SOT–23

SOT–363

40%

70%

5 N/C

Cathode 3

4 Anode

The MBD110DW, MBD330DW, and MBD770DW devices are

spin–offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT–23 devices. They are designed for

high–efficiency UHF and VHF detector applications. Readily

available to many other fast switching RF and digital applications.

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1

MBD330DWT1

MBD770DWT1

7.0

Vdc

Forward Power Dissipation

120

= 25°C

Junction Temperature

–55 to +125

–55 to +150

°C

Storage Temperature Range

stg

DEVICE MARKING

MBD110DWT1 = M4

MBD330DWT1 = T4

MBD770DWT1 = H5

Thermal Clad is a trademark of the Bergquist Company.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev.3

MBD110DWT1/D

12 3 4 5 6 7 8

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MBD330DWT1 替代型号

型号	品牌	替代类型	描述	数据表
MBD330DWT1G	ONSEMI	完全替代	Dual Schottky Barrier Diodes
MBD110DWT1G	ONSEMI	功能相似	Dual Schottky Barrier Diodes
MBD110DWT1	ONSEMI	功能相似	Dual Schottky Barrier Diodes

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