Datasheet > MBD301

MBD301

更新时间： 2024-11-22 22:30:23

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	56K
描述
Silicon Hot-Carrier Diodes Schottky Barrier Diodes

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数据手册

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MBD301 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Hot–Carrier Diodes

Schottky Barrier Diodes

MMBD301LT1

These devices are designed primarily for high–efficiency UHF and VHF detector

applications.They are readily adaptable to many other fast switching RF and digital

applications.They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements.They are also

available in a Surface Mount package.

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

•EXtremely Low Minority Carrier Lifetime –15ps(Typ)

• very Low Capacitance –1.5pF(Max)@VR=15V

•CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

ANODE

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

CATHODE

MAXIMUM RATINGS(T_J=125°C unless otherwise noted)

MBD301

MMBD301LT1

value

Rating

Reverse Voltage

symbol

unit

Volts

Forward Power Dissipation

@TA=25 °C

P _F

280

2.8

200

2.0

mW/ °C

°C

Derate above 25 °C

Operating Junction

Temperature Range

Storage Temperature Range

DEVICE MARKING

MMBD301LT1=4T

T _J

–55 to +125

–55 to +150

T _stg

°C

ELECTRICAL CHARACTERISTICS(T_A=25 °C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage(I_R=10µA)

Total Capacitance(V_R=15V,f=1.0MHz,)Figure1

Reverse Leakage(V_R=25V)Figure3

Symbol

V _(BR)R

C _T

Min

—

Typ

—

Max

—

Unit

Volts

0.9

1.5

I_R

—

200

0.45

0.6

nAdc

Vdc

Forward Voltage(IF=1.0mAdc)Figure4

Forward Voltage(IF=10mAdc)Figure4

—

0.38

0.52

—

NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.

G16–1/2

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