Datasheet > MBD110DWT1G_12

MBD110DWT1G_12

更新时间： 2024-10-18 11:58:43

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	112K
描述
Dual Schottky Barrier Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBD110DWT1G_12 数据手册

MBD110DWT1G,

MBD330DWT1G,

MBD770DWT1G

Dual Schottky Barrier

Diodes

http://onsemi.com

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT−363 package is a

solution which simplifies circuit design, reduces device count, and reduces

board space by putting two discrete devices in one small six−leaded

package. The SOT−363 is ideal for low−power surface mount applications

where board space is at a premium, such as portable products.

Anode 1

6 Cathode

5 N/C

N/C 2

Cathode 3

4 Anode

Surface Mount Comparisons:

SOT−363

SOT−23

7.6

Area (mm )

4.6

120

Max Package P (mW)

225

Device Count

SC−88 / SOT−363

CASE 419B

STYLE 6

Space Savings:

Package

1 x SOT−23

2 x SOT−23

SOT−363

40%

70%

MARKING DIAGRAM

The MBD110DW, MBD330DW, and MBD770DW devices are

spin−offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT−23 devices. They are designed for high−efficiency

UHF and VHF detector applications. Readily available to many other fast

switching RF and digital applications.

xx M G

Features

xx = Device Code

Refer to Ordering Table,

page 2

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1G

MBD330DWT1G

MBD770DWT1G

7.0

Forward Current (DC) MBD330DWT1G

200 Max

120

°C

Forward Power Dissipation T = 25°C

Junction Temperature

−55 to +125

−55 to +150

Storage Temperature Range

stg

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Publication Order Number:

September, 2011 − Rev. 7

MBD110DWT1/D

12 3 4 5 6

中文翻译

下载PDF

与MBD110DWT1G_12相关器件

型号	品牌	获取价格	描述	数据表
MBD110DWT2	MOTOROLA	获取价格	Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
MBD110DWT3	MOTOROLA	获取价格	SILICON, VHF-UHF BAND, MIXER DIODE, CASE 419B-01, 6 PIN
MBD-153-AL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD-153-KL	ETC	获取价格	Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor
MBD20	AUK	获取价格	Board Connector, 20 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina
MBD201	ONSEMI	获取价格	DIODE SILICON, UHF BAND, MIXER DIODE, TO-226AC, CASE 182-02, TO-92, 2 PIN, Microwave Mixer
MBD2057	TE	获取价格	Zero Bias Operation
MBD2057-C18	TE	获取价格	Zero Bias Operation
MBD-20-63HP	MINI	获取价格	Bi-Directional Coupler
MBD-20-63HP+	MINI	获取价格	Bi-Directional Coupler

与MBD110DWT1G_12相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

12
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

20
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

29
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

25

产品中心

服务支持

精选活动

关于我们

帮助中心

MBD110DWT1G_12

MBD110DWT1G_12 数据手册

与MBD110DWT1G_12相关器件

与MBD110DWT1G_12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBD110DWT1G_12

MBD110DWT1G_12 数据手册

与MBD110DWT1G_12相关器件

与MBD110DWT1G_12相关文章

您还可以找

您在本页遇到什么问题？