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MBD301_07 PDF预览

MBD301_07

更新时间: 2024-11-23 03:50:11
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
5页 66K
描述
Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes

MBD301_07 数据手册

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MBD301, MMBD301LT1  
Preferred Device  
Silicon Hot−Carrier Diodes  
SCHOTTKY Barrier Diodes  
These devices are designed primarily for high−efficiency UHF and  
VHF detector applications. They are readily adaptable to many other  
fast switching RF and digital applications. They are supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
and industrial/commercial requirements. They are also available in a  
Surface Mount package.  
http://onsemi.com  
30 VOLTS  
SILICON HOT−CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Features  
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)  
Very Low Capacitance − 1.5 pF (Max) @ V = 15 V  
R
MBD301  
Low Reverse Leakage − I = 13 nAdc (Typ) MBD301, MMBD301  
R
MARKING  
DIAGRAM  
Pb−Free Packages are Available  
TO−92  
(TO−226AC)  
CASE 182  
STYLE 1  
MBD  
301  
AYWWG  
MAXIMUM RATINGS  
MBD301 MMBD301LT1  
G
1
2
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
A
Y
= Assembly Location  
= Year  
V
R
30  
V
Total Device Dissipation  
P
WW  
= Work Week  
= Pb−Free Package  
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
G
Derate above 25°C  
(Note: Microdot may be in either location)  
Operating Junction  
Temperature Range  
T
−55 to +125  
°C  
2
1
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
CATHODE  
ANODE  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
MMBD301LT1  
MARKING  
DIAGRAM  
3
SOT−23  
(TO−236)  
CASE 318  
STYLE 8  
4T M G  
G
1
2
1
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
3
1
CATHODE  
ANODE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 4  
MBD301/D  

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