MBD301, MMBD301LT1
Preferred Device
Silicon Hot−Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
http://onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V = 15 V
R
MBD301
• Low Reverse Leakage − I = 13 nAdc (Typ) MBD301, MMBD301
R
MARKING
DIAGRAM
• Pb−Free Packages are Available
TO−92
(TO−226AC)
CASE 182
STYLE 1
MBD
301
AYWWG
MAXIMUM RATINGS
MBD301 MMBD301LT1
G
1
2
Rating
Reverse Voltage
Symbol
Value
Unit
A
Y
= Assembly Location
= Year
V
R
30
V
Total Device Dissipation
P
WW
= Work Week
= Pb−Free Package
F
J
@ T = 25°C
280
2.8
200
2.0
mW
mW/°C
A
G
Derate above 25°C
(Note: Microdot may be in either location)
Operating Junction
Temperature Range
T
−55 to +125
°C
2
1
Storage Temperature Range
T
stg
−55 to +150
°C
CATHODE
ANODE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
MMBD301LT1
MARKING
DIAGRAM
3
SOT−23
(TO−236)
CASE 318
STYLE 8
4T M G
G
1
2
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3
1
CATHODE
ANODE
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 4
MBD301/D