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MBD101_07

更新时间： 2024-11-23 12:20:23
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 65K
描述
Schottky Barrier Diodes

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中文翻译

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MBD101_07 数据手册

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MBD101, MMBD101LT1  
Preferred Device  
Schottky Barrier Diodes  
Designed primarily for UHF mixer applications but suitable also for  
use in detector and ultra−fast switching circuits. Supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
requirements. Also available in Surface Mount package.  
http://onsemi.com  
Features  
• Low Noise Figure − 6.0 dB Typ @ 1.0 GHz  
• Very Low Capacitance − Less Than 1.0 pF  
SILICON SCHOTTKY  
BARRIER DIODES  
• High Forward Conductance − 0.5 V (Typ) @ I = 10 mA  
F
• Pb−Free Packages are Available  
MARKING  
DIAGRAMS  
MAXIMUM RATINGS  
TO−92 2−Lead  
CASE 182  
STYLE 1  
MBD  
101  
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Value  
Unit  
AYWW G  
V
7.0  
V
R
1
G
2
2
CATHODE  
1
ANODE  
P
F
T = 25°C  
A
MBD101  
280  
225  
mW  
MMBD101LT1  
Derate above 25°C  
MBD101  
MMBD101LT1  
2.2  
1.8  
mW/°C  
SOT−23 (TO−236)  
CASE 318  
Junction Temperature  
T
+150  
°C  
°C  
J
3
STYLE 8  
Storage Temperature Range  
T
stg  
−55 to +150  
1
4M M G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
G
2
3
CATHODE  
1
ANODE  
1
(Pin 2 Not Connected)  
A
Y
= Assembly Location  
= Year  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol Min Typ Max  
Unit  
WW = Work Week  
4M = Device Code (SOT−23)  
Reverse Breakdown Voltage  
V
7.0  
10  
−
V
(BR)R  
(I = 10 mA)  
R
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Diode Capacitance  
C
V
−
0.88 1.0  
pF  
D
(V = 0, f = 1.0 MHz,  
R
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Note 1, page 2)  
Forward Voltage  
−
−
0.5  
0.6  
V
F
ORDERING INFORMATION  
(I = 10 mA)  
F
†
Device  
MBD101  
Package  
Shipping  
Reverse Leakage  
I
0.02 0.25  
mA  
R
(V = 3.0 V)  
R
TO−92  
5000 Units / Box  
5000 Units / Box  
MBD101G  
TO−92  
(Pb−Free)  
MMBD101LT1  
SOT−23 3000 / Tape & Reel  
MMBD101LT1G  
SOT−23 3000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 3  
MBD101/D  
1234

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