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M69AR048BL70ZB8T PDF预览

M69AR048BL70ZB8T

更新时间: 2024-01-24 23:35:58
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
29页 197K
描述
2MX16 STANDARD SRAM, 70ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, TFBGA-48

M69AR048BL70ZB8T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:BGA包装说明:TFBGA,
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.8最长访问时间:70 ns
JESD-30 代码:R-PBGA-B48长度:8 mm
内存密度:33554432 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL EXTENDED
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:6 mm
Base Number Matches:1

M69AR048BL70ZB8T 数据手册

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M69AR048B  
32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
ACCESS TIMES: 70ns, 80ns, 85ns  
LOW STANDBY CURRENT: 100µA  
DEEP POWER-DOWN CURRENT: 10µA  
BYTE CONTROL: UB/LB  
PROGRAMMABLE PARTIAL ARRAY  
COMPATIBLE WITH STANDARD LPSRAM  
TRI-STATE COMMON I/O  
Figure 1. Package  
FBGA  
8 WORD PAGE ACCESS CAPABILITY: 25ns  
WIDE OPERATING TEMPERATURE  
TFBGA48 (ZB)  
6 x 8mm  
T = –30 to +85°C  
A
PARTIAL POWER-DOWN MODES  
Deep Power-Down  
4 Mbit Partial Power-Down  
8 Mbit Partial Power-Down  
16 Mbit Partial Power-Down  
April 2004  
1/29  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
 
 

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