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M69KB128AA70DW8 PDF预览

M69KB128AA70DW8

更新时间: 2024-11-26 03:14:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路静态存储器
页数 文件大小 规格书
68页 490K
描述
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM

M69KB128AA70DW8 技术参数

生命周期:Obsolete零件包装代码:WAFER
包装说明:WAFERReach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.84最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:X-XUUC-N
内存密度:134217728 bit内存集成电路类型:PSEUDO STATIC RAM
内存宽度:16功能数量:1
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:8MX16
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIE封装等效代码:WAFER
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL电源:1.8 V
认证状态:Not Qualified最大待机电流:0.0002 A
子类别:Other Memory ICs最大压摆率:0.035 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

M69KB128AA70DW8 数据手册

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M69KB128AA  
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM  
PRELIMINARY DATA  
Features summary  
SUPPLY VOLTAGE  
– VCC = 1.7 to 1.95V core supply voltage  
– VCCQ = 1.7 to 1.95V for I/O buffers  
USER-SELECTABLE OPERATING MODES  
– Asynchronous Modes: Random Read, and  
Write, Page Read  
– Synchronous Modes: NOR-Flash, Full  
Synchronous (Burst Read and Write)  
ASYNCHRONOUS RANDOM READ  
– Access Times: 70ns, 85ns  
ASYNCHRONOUS PAGE READ  
– Page Size: 4, 8 or 16 Words  
Wafer  
– Subsequent Read Within Page: 20ns  
BURST READ  
– Fixed Length (4, 8, 16 or 32 Words) or  
Continuous  
– Maximum Clock Frequency: 66, 80,  
104MHz  
– Output delay: 7ns at 104MHz  
LOW POWER CONSUMPTION  
– Active Current: < 25mA  
– Standby Current: 200µA  
– Deep Power-Down Current: 10µA  
LOW POWER FEATURES  
– Partial Array Self Refresh (PASR)  
– Deep Power-Down (DPD) Mode  
OPERATING TEMPERATURE  
– –30°C to +85°C  
M69KB128AA IS ONLY AVAILABLE AS PART OF A MULTIPLE MEMORY PRODUCT  
Rev2  
1/68  
January 2006  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
1

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