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M69KB048BD70W8T PDF预览

M69KB048BD70W8T

更新时间: 2024-11-26 21:19:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路
页数 文件大小 规格书
64页 652K
描述
2MX16 PSEUDO STATIC RAM, 70ns, UUC, WAFER

M69KB048BD70W8T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:WAFER
包装说明:WAFERReach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
其他特性:SYNCHRONOUS BURST MODE ALSO POSSIBLEJESD-30 代码:X-XUUC-N
JESD-609代码:e0内存密度:33554432 bit
内存集成电路类型:PSEUDO STATIC RAM内存宽度:16
功能数量:1字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:2MX16封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:UNSPECIFIED
封装形式:UNCASED CHIP并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

M69KB048BD70W8T 数据手册

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M69KB048BD  
M69AB048BD  
32 Mbit (2 Mb x16) 1.8 V supply, burst PSRAMs  
Features  
FBGA  
Asynchronous SRAM interface  
Fast access time: 70 ns  
Asynchronous page read  
– Page size: 8 words  
FBGA71 (ZA)  
7 x 11mm  
– First access within page: 70 ns  
– Subsequent read within page: 20 ns  
Synchronous burst read/write capability  
– Fixed length (8, or 16 words) or  
continuous mode  
– Output delay: 8 ns max  
– Burst read/write mode: fixed length (8 or 16  
words) or continuous  
Low voltage operating condition  
– V = 1.7 to 1.95 V  
CC  
Byte control by UB and LB  
Low power consumption  
– Active current: 30 mA  
– Standby current: 100 µA  
Wafer  
Three power-down modes  
– Deep power-down  
– Partial array refresh of 4 Mbits  
– Partial array refresh of 8 Mbits  
Wide operating temperature  
– –30 to +85°C  
®
ECOPACK FBGA71 package available  
December 2007  
Rev 2  
1/64  
www.st.com  
1

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