品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 内存集成电路 | |
页数 | 文件大小 | 规格书 |
64页 | 652K | |
描述 | ||
2MX16 PSEUDO STATIC RAM, 70ns, UUC, WAFER |
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | WAFER |
包装说明: | WAFER | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 70 ns |
其他特性: | SYNCHRONOUS BURST MODE ALSO POSSIBLE | JESD-30 代码: | X-XUUC-N |
JESD-609代码: | e0 | 内存密度: | 33554432 bit |
内存集成电路类型: | PSEUDO STATIC RAM | 内存宽度: | 16 |
功能数量: | 1 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
组织: | 2MX16 | 封装主体材料: | UNSPECIFIED |
封装代码: | DIE | 封装形状: | UNSPECIFIED |
封装形式: | UNCASED CHIP | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M69KB048BD70ZA8F | STMICROELECTRONICS |
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2MX16 PSEUDO STATIC RAM, 70ns, BGA71, 7 X 11 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-71 | |
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2MX16 PSEUDO STATIC RAM, 70ns, BGA71, 7 X 11 MM, 0.80 MM PITCH, FBGA-71 | |
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64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM | |
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64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM | |
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64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM | |
M69KB096AB | STMICROELECTRONICS |
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64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM | |
M69KB096AB70CW8 | STMICROELECTRONICS |
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4MX16 PSEUDO STATIC RAM, 70ns, UUC, WAFER | |
M69KB096AB70DW8 | STMICROELECTRONICS |
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4MX16 PSEUDO STATIC RAM, 70ns, UUC, WAFER | |
M69KB096AB80CW8 | STMICROELECTRONICS |
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64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM | |
M69KB096AB80DW8 | STMICROELECTRONICS |
获取价格 |
64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM |