Datasheet > M69KB096AA

M69KB096AA

更新时间： 2024-11-26 11:26:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器时钟
页数	文件大小	规格书
48页	621K
描述
64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

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M69KB096AA 数据手册

M69KB096AA

64 Mbit (4M x16)

1.8V Supply, 80MHz Clock Rate, Burst PSRAM

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Package

–

V_CC= 1.7 to 1.95V core supply voltage

V_CCQ= 1.7 to 3.3V for I/O buffers

■

ASYNCHRONOUS MODES

–

Asynchronous Random Read: 70ns and

85ns access time

–

Asynchronous Write

Asynchronous Page Read

Page Size: 16 words

Subsequent read within page: 20ns

■

SYNCHRONOUS BURST READ AND

WRITE MODES

–

Burst Write in Continuous Mode

Burst Read:

Wafer

Fixed Length (4, 8, or 16 Words) or

Continuous mde

Maximum Clock Frequency: 66MHz,

80MHz

Burst initial latency: 50ns (4 clock cycles)

at 80MHz

■

LOW POWER FEATURES

–

Temperature Compensated Refresh

(TCR)

Output delay: 9ns at 80MHz

–

Partial Array Refresh (PAR)

Deep Power-Down (DPD) Mode

■

BYTE CONTROL BY LB/UB

LOW POWER CONSUMPTION

OPERATING TEMPERATURE

–30°C to +85°C

–

Asynchronous Random Read Mode:

< 25mA

Asynchronus Page Read Mode

–

(subsequent read operations): < 15mA

Synchronous Burst Read

Initial access: < 35mA

Continuous Burst Read: < 15mA

–

Standby Current: 120µA

Deep Power-Down Current: 10µA (typ)

THE M69KB096AA IS ONLY AVAILABLE AS PART OF A MULTI-CHIP PACKAGE PRODUCT

January 2006

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