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M69KB096AA85AW8 PDF预览

M69KB096AA85AW8

更新时间: 2024-11-26 11:26:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
48页 621K
描述
64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM

M69KB096AA85AW8 技术参数

生命周期:Obsolete零件包装代码:WAFER
包装说明:WAFERReach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.84Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:X-XUUC-N内存密度:67108864 bit
内存集成电路类型:PSEUDO STATIC RAM内存宽度:16
功能数量:1字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:4MX16输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIE
封装等效代码:WAFER封装形状:UNSPECIFIED
封装形式:UNCASED CHIP并行/串行:PARALLEL
电源:1.8 V认证状态:Not Qualified
最大待机电流:0.00012 A子类别:Other Memory ICs
最大压摆率:0.035 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

M69KB096AA85AW8 数据手册

 浏览型号M69KB096AA85AW8的Datasheet PDF文件第2页浏览型号M69KB096AA85AW8的Datasheet PDF文件第3页浏览型号M69KB096AA85AW8的Datasheet PDF文件第4页浏览型号M69KB096AA85AW8的Datasheet PDF文件第5页浏览型号M69KB096AA85AW8的Datasheet PDF文件第6页浏览型号M69KB096AA85AW8的Datasheet PDF文件第7页 
M69KB096AA  
64 Mbit (4M x16)  
1.8V Supply, 80MHz Clock Rate, Burst PSRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
VCC = 1.7 to 1.95V core supply voltage  
VCCQ = 1.7 to 3.3V for I/O buffers  
ASYNCHRONOUS MODES  
Asynchronous Random Read: 70ns and  
85ns access time  
Asynchronous Write  
Asynchronous Page Read  
Page Size: 16 words  
Subsequent read within page: 20ns  
SYNCHRONOUS BURST READ AND  
WRITE MODES  
Burst Write in Continuous Mode  
Burst Read:  
Wafer  
Fixed Length (4, 8, or 16 Words) or  
Continuous mde  
Maximum Clock Frequency: 66MHz,  
80MHz  
Burst initial latency: 50ns (4 clock cycles)  
at 80MHz  
LOW POWER FEATURES  
Temperature Compensated Refresh  
(TCR)  
Output delay: 9ns at 80MHz  
Partial Array Refresh (PAR)  
Deep Power-Down (DPD) Mode  
BYTE CONTROL BY LB/UB  
LOW POWER CONSUMPTION  
OPERATING TEMPERATURE  
–30°C to +85°C  
Asynchronous Random Read Mode:  
< 25mA  
Asynchronus Page Read Mode  
(subsequent read operations): < 15mA  
Synchronous Burst Read  
Initial access: < 35mA  
Continuous Burst Read: < 15mA  
Standby Current: 120µA  
Deep Power-Down Current: 10µA (typ)  
THE M69KB096AA IS ONLY AVAILABLE AS PART OF A MULTI-CHIP PACKAGE PRODUCT  
January 2006  
1/48  

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