Datasheet > M69KB096AB80DW8

M69KB096AB80DW8

更新时间： 2024-09-25 11:26:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器时钟
页数	文件大小	规格书
73页	482K
描述
64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

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数据手册

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M69KB096AB80DW8 数据手册

M69KB096AB

64 Mbit (4 Mb x16), 104MHz Clock Rate,

1.8V Supply, Bare Die, Burst PSRAM

PRELIMINARY DATA

Features summary

■ Supply Voltage

– V_CC= 1.7 to 1.95V core supply voltage

– V_CCQ= 1.7 to 1.95V for I/O buffers

■ User-selectable Operating Modes

– Asynchronous Modes: Random Read, and

Write, Page Read

– Synchronous Modes: NOR-Flash, Full

Synchronous (Burst Read and Write)

■ Asynchronous Random Read

– Access Time: 70ns

■ Asynchronous Page Read

– Page Size: 4, 8 or 16 Words

– Subsequent Read Within Page: 20ns

Wafer

■ Burst Read

– Fixed Length (4, 8, 16 or 32 Words) or

Continuous

– Maximum Clock Frequency: 104MHz

– Output delay: 7ns at 104MHz

■ Low Power Consumption

– Active Current: < 25mA

– Standby Current: 140µA

– Deep Power-Down Current: < 10µA

■ Low Power Features

– Partial Array Self-Refresh (PASR)

– Deep Power-Down (DPD) Mode

– Automatic Temperature-compensated Self-

Refresh

■ Operating Temperature

– –30°C to +85°C

The M69KB096AB is only available as part of a multi-chip package Product.

Rev 1

1/73

November 2005

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

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