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M69AW048B PDF预览

M69AW048B

更新时间: 2024-11-25 22:25:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
29页 429K
描述
32 Mbit (2M x16) 3V Asynchronous PSRAM

M69AW048B 数据手册

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M69AW048B  
32 Mbit (2M x16) 3V Asynchronous PSRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.3V  
ACCESS TIMES: 70ns  
Figure 1. Package  
LOW STANDBY CURRENT: 100µA  
DEEP POWER-DOWN CURRENT: 10µA  
BYTE CONTROL: UB/LB  
PROGRAMMABLE PARTIAL ARRAY  
COMPATIBLE WITH STANDARD LPSRAM  
TRI-STATE COMMON I/O  
8 WORD PAGE ACCESS CAPABILITY: 18ns  
WIDE OPERATING TEMPERATURE  
– TA = –30 to +85°C  
FBGA  
TFBGA48 (ZB)  
6x8 mm  
POWER-DOWN MODES  
– Deep Power-Down  
– 4 Mbit Partial Array Refresh  
– 8 Mbit Partial Array Refresh  
– 16 Mbit Partial Array Refresh  
November 2004  
1/29  

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