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M69AR048BL70ZB8F PDF预览

M69AR048BL70ZB8F

更新时间: 2024-11-26 14:53:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
29页 197K
描述
2MX16 STANDARD SRAM, 70ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, TFBGA-48

M69AR048BL70ZB8F 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
Base Number Matches:1

M69AR048BL70ZB8F 数据手册

 浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第2页浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第3页浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第4页浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第5页浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第6页浏览型号M69AR048BL70ZB8F的Datasheet PDF文件第7页 
M69AR048B  
32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
ACCESS TIMES: 70ns, 80ns, 85ns  
LOW STANDBY CURRENT: 100µA  
DEEP POWER-DOWN CURRENT: 10µA  
BYTE CONTROL: UB/LB  
PROGRAMMABLE PARTIAL ARRAY  
COMPATIBLE WITH STANDARD LPSRAM  
TRI-STATE COMMON I/O  
Figure 1. Package  
FBGA  
8 WORD PAGE ACCESS CAPABILITY: 25ns  
WIDE OPERATING TEMPERATURE  
TFBGA48 (ZB)  
6 x 8mm  
T = –30 to +85°C  
A
PARTIAL POWER-DOWN MODES  
Deep Power-Down  
4 Mbit Partial Power-Down  
8 Mbit Partial Power-Down  
16 Mbit Partial Power-Down  
April 2004  
1/29  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
 
 

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