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M69AR048BL70ZB8 PDF预览

M69AR048BL70ZB8

更新时间: 2024-11-26 14:53:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
29页 197K
描述
2MX16 STANDARD SRAM, 70ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, TFBGA-48

M69AR048BL70ZB8 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8 mm内存密度:33554432 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:2MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00001 A
子类别:Other Memory ICs最大压摆率:0.025 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:TIN LEAD端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

M69AR048BL70ZB8 数据手册

 浏览型号M69AR048BL70ZB8的Datasheet PDF文件第2页浏览型号M69AR048BL70ZB8的Datasheet PDF文件第3页浏览型号M69AR048BL70ZB8的Datasheet PDF文件第4页浏览型号M69AR048BL70ZB8的Datasheet PDF文件第5页浏览型号M69AR048BL70ZB8的Datasheet PDF文件第6页浏览型号M69AR048BL70ZB8的Datasheet PDF文件第7页 
M69AR048B  
32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 1.65 to 1.95V  
ACCESS TIMES: 70ns, 80ns, 85ns  
LOW STANDBY CURRENT: 100µA  
DEEP POWER-DOWN CURRENT: 10µA  
BYTE CONTROL: UB/LB  
PROGRAMMABLE PARTIAL ARRAY  
COMPATIBLE WITH STANDARD LPSRAM  
TRI-STATE COMMON I/O  
Figure 1. Package  
FBGA  
8 WORD PAGE ACCESS CAPABILITY: 25ns  
WIDE OPERATING TEMPERATURE  
TFBGA48 (ZB)  
6 x 8mm  
T = –30 to +85°C  
A
PARTIAL POWER-DOWN MODES  
Deep Power-Down  
4 Mbit Partial Power-Down  
8 Mbit Partial Power-Down  
16 Mbit Partial Power-Down  
April 2004  
1/29  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
 
 

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