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KSC5321F PDF预览

KSC5321F

更新时间: 2024-02-27 14:50:04
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 58K
描述
High Voltage and High Reliability

KSC5321F 技术参数

生命周期:Active零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.3
其他特性:HIGH RELIABILITY最大集电极电流 (IC):5 A
集电极-发射极最大电压:500 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:NO端子面层:NOT SPECIFIED
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):14 MHzBase Number Matches:1

KSC5321F 数据手册

 浏览型号KSC5321F的Datasheet PDF文件第2页浏览型号KSC5321F的Datasheet PDF文件第3页浏览型号KSC5321F的Datasheet PDF文件第4页浏览型号KSC5321F的Datasheet PDF文件第5页 
KSC5321F  
High Voltage and High Reliability  
High speed Switching  
Wide Safe Operating Area  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
800  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
CEO  
EBO  
7
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
A
*Base Current (Pulse)  
Power Dissipation(Tc=25)  
Junction Temperature  
Storage Temperature  
4
40  
A
BP  
P
W
°C  
°C  
C
T
T
150  
J
- 55 ~ 150  
STG  
* Pulse Test: Pulse Width=5ms, Duty Cycle10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
3.1  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2002 Fairchild Semiconductor Corporation  
Rev. B, December 2002  

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