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KSC5345 PDF预览

KSC5345

更新时间: 2024-11-13 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 59K
描述
High Voltage and High Reliability

KSC5345 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.92其他特性:HIGH RELIABILITY
最大集电极电流 (IC):5 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):14 MHz
Base Number Matches:1

KSC5345 数据手册

 浏览型号KSC5345的Datasheet PDF文件第2页浏览型号KSC5345的Datasheet PDF文件第3页浏览型号KSC5345的Datasheet PDF文件第4页浏览型号KSC5345的Datasheet PDF文件第5页浏览型号KSC5345的Datasheet PDF文件第6页 
KSC5345  
High Voltage and High Reliability  
High speed Switching  
Wide Safe Operating Area  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
900  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
450  
V
CEO  
EBO  
14  
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
A
*Base Current (Pulse)  
4
40  
A
BP  
P
Power Dissipation(T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* Pulse Test: Pulse Width = 5ms, Duty Cycle10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
1.25  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2001 Fairchild Semiconductor Corporation  
Rev. A, October 2001  

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