Datasheet > KSC5402D_09

KSC5402D_09

更新时间： 2024-09-21 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
10页	225K
描述
NPN Silicon Transistor, Planar Silicon Transistor

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数据手册

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KSC5402D_09 数据手册

December 2009

KSC5402D/KSC5402DT

NPN Silicon Transistor, Planar Silicon Transistor

Features

D-PAK

• High Voltage High Speed Power Switch Application

Equivalent Circuit

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

TO-220

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

• Two Package Choices; D-PAK or TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

1000

450

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

I_CP

I_B

I_BP

*Base Current (Pulse)

P_C

Power Dissipation(T_C=25°C) : D-PAK*

: TO-220

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

- 65 to 150

* Pulse Test: Pulse Width=5ms, Duty Cycle<10%

Thermal Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Rating

Units

TO-220

D-PAK

4.17*

R_θJC

R_θJA

T_L

Thermal Resistance

Junction to Case

Junction to Ambient

2.5

62.5

270

°C/W

°C

Maximum Lead Temperature for Soldering Purpose

; 1/8” from Case for 5 Seconds

270

* Mounted on 1” square PCB (FR4 ro G-10 Material)

KSC5402D/KSC5402DT Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...10

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