5秒后页面跳转
KSC5402DTTU PDF预览

KSC5402DTTU

更新时间: 2024-02-08 00:57:57
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 152K
描述
Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC5402DTTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
最大集电极电流 (IC):2 A集电极-发射极最大电压:450 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):11 MHz
Base Number Matches:1

KSC5402DTTU 数据手册

 浏览型号KSC5402DTTU的Datasheet PDF文件第2页浏览型号KSC5402DTTU的Datasheet PDF文件第3页浏览型号KSC5402DTTU的Datasheet PDF文件第4页浏览型号KSC5402DTTU的Datasheet PDF文件第5页浏览型号KSC5402DTTU的Datasheet PDF文件第6页浏览型号KSC5402DTTU的Datasheet PDF文件第7页 
KSC5402D/KSC5402DT  
D-PAK  
High Voltage High Speed Power Switch  
Application  
Equivalent Circuit  
C
1
Wide Safe Operating Area  
Built-in Free Wheeling Diode  
Suitable for Electronic Ballast Application  
Small Variance in Storage Time  
Two Package Choices; D-PAK or TO-220  
TO-220  
B
1
E
1.Base 2.Collector 3.Emitter  
NPN Silicon Transistor Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
1000  
450  
12  
2
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
CEO  
EBO  
V
I
I
I
I
A
C
5
A
CP  
B
1
A
*Base Current (Pulse)  
2
A
BP  
P
Power Dissipation(T =25°C) : D-PAK *  
30  
50  
W
C
C
: TO-220  
T
T
Junction Temperature  
150  
°C  
°C  
J
Storage Temperature  
- 65 ~ 150  
STG  
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Rating  
Unit  
Symbol  
Characteristics  
TO-220  
2.5  
D-PAK  
4.17 *  
50  
R
R
Thermal Resistance  
Junction to Case  
Junction to Ambient  
°C/W  
°C  
θjc  
62.5  
270  
θja  
T
Maximum Lead Temperature for Soldering Purpose  
; 1/8” from Case for 5 Seconds  
270  
L
* Mounted on 1” square PCB (FR4 ro G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
Rev. B2, December 2002  

与KSC5402DTTU相关器件

型号 品牌 获取价格 描述 数据表
KSC5405 FAIRCHILD

获取价格

High Voltage Power Switch Switching Applications
KSC5405F FAIRCHILD

获取价格

High Voltage Power Switching Applications
KSC5405J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5405TU FAIRCHILD

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC541G CK-COMPONENTS

获取价格

Tact Switch with Rocker Option for SMT
KSC541G ITT

获取价格

Tact Switch with Rocker Option for SMT
KSC541GROHS ITT

获取价格

Keypad Switch, 1 Switches, SPST, Momentary-tactile, 0.05A, 32VDC, 3N, Solder Terminal, Sur
KSC541GROHS LITTELFUSE

获取价格

Tact Switch with Rocker Option for SMT
KSC541J ITT

获取价格

Tact Switch with Rocker Option for SMT
KSC541JROHS LITTELFUSE

获取价格

Tact Switch with Rocker Option for SMT