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KSC5367F PDF预览

KSC5367F

更新时间: 2024-02-19 16:27:46
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 64K
描述
High Voltage and High Reliability

KSC5367F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.81
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):12JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):40 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

KSC5367F 数据手册

 浏览型号KSC5367F的Datasheet PDF文件第2页浏览型号KSC5367F的Datasheet PDF文件第3页浏览型号KSC5367F的Datasheet PDF文件第4页浏览型号KSC5367F的Datasheet PDF文件第5页浏览型号KSC5367F的Datasheet PDF文件第6页 
KSC5367F  
High Voltage and High Reliability  
High speed Switching  
Wide Safe Operating Area  
High Collector-Base Voltage  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
1600  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Curren (Pulse)  
Base Current (DC)  
800  
V
CEO  
EBO  
12  
V
I
I
I
I
3
A
C
6
A
CP  
B
2
A
*Base Current (Pulse)  
4
40  
A
BP  
P
Power Dissipation(T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 65 ~ 150  
STG  
* Pulse Test: Pulse Width=5ms, Duty Cycle10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
3.1  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

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