5秒后页面跳转
KSC5402D PDF预览

KSC5402D

更新时间: 2024-09-20 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
10页 156K
描述
High Voltage High Speed Power Switch Application

KSC5402D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:450 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):11 MHzBase Number Matches:1

KSC5402D 数据手册

 浏览型号KSC5402D的Datasheet PDF文件第2页浏览型号KSC5402D的Datasheet PDF文件第3页浏览型号KSC5402D的Datasheet PDF文件第4页浏览型号KSC5402D的Datasheet PDF文件第5页浏览型号KSC5402D的Datasheet PDF文件第6页浏览型号KSC5402D的Datasheet PDF文件第7页 
KSC5402D/KSC5402DT  
D-PAK  
High Voltage High Speed Power Switch  
Application  
Equivalent Circuit  
C
1
Wide Safe Operating Area  
Built-in Free Wheeling Diode  
Suitable for Electronic Ballast Application  
Small Variance in Storage Time  
Two Package Choices; D-PAK or TO-220  
TO-220  
B
1
E
1.Base 2.Collector 3.Emitter  
NPN Silicon Transistor Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
1000  
450  
12  
2
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
CEO  
EBO  
V
I
I
I
I
A
C
5
A
CP  
B
1
A
*Base Current (Pulse)  
2
A
BP  
P
Power Dissipation(T =25°C) : D-PAK *  
30  
50  
W
C
C
: TO-220  
T
T
Junction Temperature  
150  
°C  
°C  
J
Storage Temperature  
- 65 ~ 150  
STG  
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Rating  
Unit  
Symbol  
Characteristics  
TO-220  
2.5  
D-PAK  
4.17 *  
50  
R
R
Thermal Resistance  
Junction to Case  
Junction to Ambient  
°C/W  
°C  
θjc  
62.5  
270  
θja  
T
Maximum Lead Temperature for Soldering Purpose  
; 1/8” from Case for 5 Seconds  
270  
L
* Mounted on 1” square PCB (FR4 ro G-10 Material)  
©2002 Fairchild Semiconductor Corporation  
Rev. B2, December 2002  

与KSC5402D相关器件

型号 品牌 获取价格 描述 数据表
KSC5402D_09 FAIRCHILD

获取价格

NPN Silicon Transistor, Planar Silicon Transistor
KSC5402DT FAIRCHILD

获取价格

High Voltage High Speed Power Switch Application
KSC5402DTF FAIRCHILD

获取价格

Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSC5402DTF ONSEMI

获取价格

NPN硅晶体管的平面硅晶体管
KSC5402DTTU FAIRCHILD

获取价格

Power Bipolar Transistor, 2A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5402DTTU ONSEMI

获取价格

NPN 硅晶体管,平面硅晶体管
KSC5405 FAIRCHILD

获取价格

High Voltage Power Switch Switching Applications
KSC5405F FAIRCHILD

获取价格

High Voltage Power Switching Applications
KSC5405J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5405TU FAIRCHILD

获取价格

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast