KSC5367

更新时间： 2024-09-26 05:41:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	112K
描述
isc Silicon NPN Power Transistor

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技术参数
数据手册

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KSC5367 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

KSC5367 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSC5367

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 800V(Min)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1600

800

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_CM

I_B

I_BM

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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