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KSC5338D_10 PDF预览

KSC5338D_10

更新时间: 2024-11-14 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
8页 394K
描述
NPN Triple Diffused Planar Silicon Transistor

KSC5338D_10 数据手册

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May 2010  
KSC5338D/KSC5338DW  
NPN Triple Diffused Planar Silicon Transistor  
Features  
• High Voltage Power Switch Switching Application  
• Wide Safe Operating Area  
• Built-in Free-Wheeling Diode  
• Suitable for Electronic Ballast Application  
• Small Variance in Storage Time  
• Two Package Choices : TO-220 or D2-PAK  
Equivalent Circuit  
D2-PAK  
C
1
B
TO-220  
E
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings Ta=25°C unless otherwise noted  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
V
V
V
A
Collector-Base Voltage  
1000  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
450  
12  
5
10  
ICP  
IB  
A
A
2
IBP  
PC  
TJ  
TSTG  
*Base Current (Pulse)  
Power Dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature  
4
75  
150  
A
W
°C  
°C  
- 55 to 150  
* Pulse Test : Pulse Width = 5ms, Duty Cycle 10%  
Thermal Characteristics  
Symbol  
Parameter  
Rating  
1.65  
62.5  
Units  
°C/W  
°C/W  
°C  
Rθjc  
Rθja  
Junction to Case  
Thermal Resistance  
Junction to Ambient  
TL  
Maximum Lead Temperature for Soldering  
270  
© 2010 Fairchild Semiconductor Corporation  
KSC5338D/KSC5338DW Rev. B1  
www.fairchildsemi.com  
1

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