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KSC5338D PDF预览

KSC5338D

更新时间: 2024-09-25 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管电源开关高压局域网
页数 文件大小 规格书
8页 98K
描述
High Voltage Power Switch Switching Application

KSC5338D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.28
Is Samacsys:N最大集电极电流 (IC):5 A
集电极-发射极最大电压:450 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):6JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):11 MHzBase Number Matches:1

KSC5338D 数据手册

 浏览型号KSC5338D的Datasheet PDF文件第2页浏览型号KSC5338D的Datasheet PDF文件第3页浏览型号KSC5338D的Datasheet PDF文件第4页浏览型号KSC5338D的Datasheet PDF文件第5页浏览型号KSC5338D的Datasheet PDF文件第6页浏览型号KSC5338D的Datasheet PDF文件第7页 
KSC5338D/KSC5338DW  
D2-PAK  
Equivalent Circuit  
C
High Voltage Power Switch Switching  
Application  
1
Wide Safe Operating Area  
Built-in Free-Wheeling Diode  
Suitable for Electronic Ballast Application  
Small Variance in Storage Time  
Two Package Choices : TO-220 or D2-PAK  
TO-220  
B
E
1
1.Base 2.Collector 3.Emitter  
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
1000  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
450  
V
CEO  
EBO  
12  
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
A
*Base Current (Pulse)  
4
75  
A
BP  
P
Power Dissipation(T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
* Pulse Test : Pulse Width = 5ms, Duty Cycle 10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Maximun Lead Temperature for Soldering  
Rating  
1.65  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
T
270  
°C  
L
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

KSC5338D 替代型号

型号 品牌 替代类型 描述 数据表
MJE18004D2G ONSEMI

类似代替

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode
BUL38D STMICROELECTRONICS

功能相似

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL49D STMICROELECTRONICS

功能相似

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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