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KSC5321FTU PDF预览

KSC5321FTU

更新时间: 2024-02-19 10:55:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
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6页 58K
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KSC5321FTU 数据手册

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KSC5321  
High Voltage and High Reliability  
High speed Switching  
Wide Safe Operating Area  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
800  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
CEO  
EBO  
7
V
I
I
I
I
5
A
C
10  
A
CP  
B
2
4
A
*Base Current (Pulse)  
A
BP  
P
Power Dissipation(T =25°C)  
100  
W
°C  
°C  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* Pulse Test: Pulse Width = 5ms, Duty Cycle10%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Characteristics  
Junction to Case  
Junction to Ambient  
Rating  
1.25  
Unit  
R
R
Thermal Resistance  
°C/W  
θjc  
θja  
62.5  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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