Datasheet > KDS6685

KDS6685

更新时间： 2024-09-15 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	66K
描述
30V P-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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KDS6685 数据手册

SMD Type

ICIC

30V P-Channel PowerTrench MOSFET

KDS6685

Features

-8.8 A, -30 V. RDS(ON) = 20m @ VGS = -10 V

R^DS(ON)= 35m @ VGS =-4.5V

Low gate charge(17 nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

-30

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

-8.8

-50

I^D

Drain Current Pulsed

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

2.5

1.2

T^J, TSTG

-55 to 175

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1c)

Thermal Resistance Junction to Case (Note 1)

125

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