Datasheet > KDS8333C

KDS8333C

更新时间： 2024-09-15 12:31:39

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
3页	170K
描述
N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m Low gate charge

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KDS8333C 数据手册

SMD Type

TransistIoCrs

Product specification

KDS8333C

Features

N-Channel

4.1 A, 30 V R^DS(ON)= 80m @ V^GS= 10 V

R^DS(ON)= 130m @ V^GS=4.5V

P-Channel

-3.4 A, 30 V R^DS(ON)= 130 m @ V^GS=- 10 V

R^DS(ON)= 200 m @ V^GS=-4.5V

Low gate charge

High performance trench technology for extremely low R^DS(ON).

High power and handling capability in a widely used

surface mount package.

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

N-Channel

P- Channel

-60

Unit

4.1

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

-3.4

-20

I^D

Power Dissipation for Single Operation

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

P^D

1.6

P^D

0.9

(Note 1c)

-55 to 150

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

T^J, T^STG

Thermal Resistance Junction to Case

(Note 1)

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