Datasheet > KDS6910

KDS6910

更新时间： 2024-11-01 12:31:39

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
2页	128K
描述
7.5 A, 30 V. RDS(ON) = 13m RDS(ON) = 17m Low gate charge

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KDS6910 数据手册

SMD Type

ICIC

Product specification

KDS6910

Features

7.5 A, 30 V. R^DS(ON)= 13m @ V^GS= 10 V

R^DS(ON)= 17m @ V^GS=4.5V

Low gate charge

Fast switching speed

High performance trench technology for extremely low R^DS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

7.5

I^D

Drain Current Pulsed

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

1.6

P^D

0.9

T^J, T^STG

-55 to 175

Thermal Resistance Junction to Case (Note 1)

Thermal Resistance Junction to Ambient (Note 1a)

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