Datasheet > KDS8928A

KDS8928A

更新时间： 2024-09-15 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管
页数	文件大小	规格书
3页	86K
描述
Dual N & P-Channel Enhancement Mode Field Effect Transistor

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数据手册

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KDS8928A 数据手册

SMD Type

TransistIoCrs

Dual N & P-Channel Enhancement

Mode Field Effect Transistor

KDS8928A

Features

N-Channel

5.5 A, 30 V R^DS(ON)= 0.030 @ VGS = 4.5V

RDS(ON) = 0.038 @ VGS =2.5V

P-Channel

-4 A, -20 V R^DS(ON)= 0.055 @ VGS =- 4.5 V

R^DS(ON)= 0.070 @ VGS =-2.5V

High density cell design for extremely low RDS(ON).

High power and handling capability in a widely

used surface mount package

Dual (N & P-Channel) MOSFET in surface mount package.

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

N-Channel

P- Channel

Unit

V^DSS

V^GS

-8

Gate to Source Voltage

Drain Current Continuous (Note 1a)

Drain Current Pulsed

5.5

-4

I^D

-20

Power Dissipation for Single Operation

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

P^D

1.6

P^D

0.9

(Note 1c)

-55 to 150

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

T^J, TSTG

Thermal Resistance Junction to Case

(Note 1)

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