Datasheet > KDS6910

KDS6910

更新时间： 2024-11-17 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	67K
描述
Dual N-Channel Logic Level PowerTrench MOSFET

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中文翻译

获取价格

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KDS6910 数据手册

SMD Type

ICIC

Dual N-Channel Logic Level PowerTrench MOSFET

KDS6910

Features

7.5 A, 30 V. RDS(ON) = 13m @ VGS = 10 V

R^DS(ON)= 17m @ VGS =4.5V

Low gate charge

Fast switching speed

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

7.5

I^D

Drain Current Pulsed

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

1.6

0.9

T^J, TSTG

-55 to 175

Thermal Resistance Junction to Case (Note 1)

Thermal Resistance Junction to Ambient (Note 1a)

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KDS8333C	TYSEMI	获取价格	N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m Low gate charge
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