Datasheet > KDS6375

KDS6375

更新时间： 2024-11-19 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	67K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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数据手册

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KDS6375 数据手册

SMD Type

ICIC

P-Channel 2.5V Specified PowerTrench MOSFET

KDS6375

Features

-8 A, -20 V. RDS(ON) = 24m @ VGS = -4.5 V

R^DS(ON)= 32m @ VGS =-2.5V

Low gate charge(26nC typical)

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

-20

Gate to Source Voltage

V^GS

-8

Drain Current Continuous (Note 1a)

I^D

Drain Current Pulsed

-50

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

2.5

1.2

T^J, TSTG

-55 to 175

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1c)

Thermal Resistance Junction to Case (Note 1)

125

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