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JS28F320J3C110

更新时间: 2024-11-30 12:26:19
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英特尔 - INTEL /
页数 文件大小 规格书
72页 990K
描述
Intel StrataFlash® Memory

JS28F320J3C110 数据手册

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Intel StrataFlash® Memory (J3)  
28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16)  
Datasheet  
Product Features  
Performance  
Architecture  
110/115/120/150 ns Initial Access Speed  
Multi-Level Cell Technology: High  
Density at Low Cost  
125 ns Initial Access Speed (256 Mbit  
density only)  
High-Density Symmetrical 128-Kbyte  
Blocks  
25 ns Asynchronous Page mode Reads  
—256 Mbit (256 Blocks) (0.18µm only)  
—128 Mbit (128 Blocks)  
64 Mbit (64 Blocks)  
30 ns Asynchronous Page mode Reads  
(256Mbit density only)  
32-Byte Write Buffer  
—32 Mbit (32 Blocks)  
—6.8 µs per byte effective  
Quality and Reliability  
Operating Temperature:  
-40 °C to +85 °C  
programming time  
Software  
Program and Erase suspend support  
100K Minimum Erase Cycles per Block  
0.18 µm ETOX™ VII Process (J3C)  
Flash Data Integrator (FDI), Common  
Flash Interface (CFI) Compatible  
Security  
0.25 µm ETOX™ VI Process (J3A)  
Packaging and Voltage  
128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
56-Lead TSOP Package  
®
64-Ball Intel Easy BGA Package  
Lead-free packages available  
®
48-Ball Intel VF BGA Package (32 and  
Absolute Protection with VPEN = GND  
Individual Block Locking  
Block Erase/Program Lockout during  
Power Transitions  
64 Mbit) (x16 only)  
VCC 2.7 V to 3.6 V  
=
VCCQ = 2.7 V to 3.6 V  
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3)  
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-  
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-  
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed  
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future  
devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes  
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components  
are ideal for code and data applications where high density and low cost are required. Examples include  
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from  
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash®  
memory (28F640J5 and 28F320J5) devices.  
J3 memory components deliver a new generation of forward-compatible software support. By using the  
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density  
upgrades and optimized write capabilities of future Intel StrataFlash® memory devices. Manufactured on Intel®  
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device  
provides the highest levels of quality and reliability.  
Notice: This document contains information on new products in production. The specifications are  
subject to change without notice. Verify with your local Intel sales office that you have the latest  
datasheet before finalizing a design.  
Order Number: 290667-020  
November 2004  

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