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JS28F512P30BF PDF预览

JS28F512P30BF

更新时间: 2024-11-30 20:55:59
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路闪存
页数 文件大小 规格书
82页 979K
描述
Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56

JS28F512P30BF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:LEAD FREE, TSOP-56
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.46Is Samacsys:N
最长访问时间:110 ns启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PDSO-G56
长度:18.4 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:4,511
端子数量:56字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:16 words并行/串行:PARALLEL
电源:1.8,1.8/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:16K,64K最大待机电流:0.000225 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

JS28F512P30BF 数据手册

 浏览型号JS28F512P30BF的Datasheet PDF文件第2页浏览型号JS28F512P30BF的Datasheet PDF文件第3页浏览型号JS28F512P30BF的Datasheet PDF文件第4页浏览型号JS28F512P30BF的Datasheet PDF文件第5页浏览型号JS28F512P30BF的Datasheet PDF文件第6页浏览型号JS28F512P30BF的Datasheet PDF文件第7页 
Numonyx™ Axcell™ P30-65nm Flash Memory  
512-Mbit, 1-Gbit Monolithic  
Datasheet  
Product Features  
„ High performance:  
„ Enhanced Security:  
— 100ns initial access time for Easy BGA  
— 110ns initial access time for TSOP  
— 25ns 16-word asynchronous-page read mode  
— 52MHz with zero WAIT states, 17ns clock-to-  
data output synchronous-burst read mode  
— 4-, 8-, 16- and continuous-word options for  
burst mode  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down capability  
— Password Access feature  
— One-Time Programmable Register:  
— 64 OTP bits, programmed with unique  
information by Numonyx  
— Buffered Enhanced Factory Programming at  
2.0MByte/s (typ) using 512-word buffer  
— 1.8V buffered programming at 1.46MByte/s  
(Typ) using 512-word buffer  
— 2112 OTP bits, available for customer  
programming  
„ Software:  
„ Architecture:  
— 20µs (Typ) program suspend  
— 20µs (Typ) erase suspend  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
— Numonyx™ Flash Data Integrator optimized  
— Basic Command Set and Extended Function  
Interface (EFI) Command Set compatible  
— Common Flash Interface capable  
„ Density and Packaging  
— Symmetrically-blocked architecture  
— Asymmetrically-blocked architecture, Four  
32-KByte parameter blocks: Top or Bottom  
configuration  
— 56-Lead TSOP (512-Mbit, 1-Gbit)  
— 64-Ball Easy BGA (512-Mbit, 1-Gbit)  
— 16-bit wide data bus  
128-KByte array blocks  
— Blank Check to verify an erase block  
„ Voltage and Power:  
„ Quality and Reliability  
— VCC (core) voltage: 1.7V – 2.0V  
— VCCQ (I/O) voltage: 1.7V – 3.6V  
— Standby current: 70µA(Typ) for 512-Mbit,  
75µA(Typ) for 1-Gbit  
— Operating temperature: –40°C to +85°C  
— Minimum 100,000 erase cycles  
— Numonyx™ ETOX™ X process technology  
— Continuous synchronous read current: 21mA  
(Typ)/24mA (Max) at 52MHz  
Datasheet  
1
Aug 2009  
Order Number: 208042-02  

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