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JS28F320J3F75 PDF预览

JS28F320J3F75

更新时间: 2024-11-30 19:58:35
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路闪存
页数 文件大小 规格书
66页 707K
描述
Flash, 2MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

JS28F320J3F75 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP, TSSOP56,.8,20Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.76最长访问时间:75 ns
备用内存宽度:8命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G56JESD-609代码:e3
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:32
端子数量:56字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:4/8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.00012 A
子类别:Flash Memories最大压摆率:0.054 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

JS28F320J3F75 数据手册

 浏览型号JS28F320J3F75的Datasheet PDF文件第2页浏览型号JS28F320J3F75的Datasheet PDF文件第3页浏览型号JS28F320J3F75的Datasheet PDF文件第4页浏览型号JS28F320J3F75的Datasheet PDF文件第5页浏览型号JS28F320J3F75的Datasheet PDF文件第6页浏览型号JS28F320J3F75的Datasheet PDF文件第7页 
Numonyx™ Embedded Flash Memory (J3 65  
nm) Single Bit per Cell (SBC)  
32, 64, and 128 Mbit  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Symmetrical 128-KB blocks  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— 32 Mbit (32 blocks)  
„ Performance  
— Enhanced security options for code  
protection  
— 128-bit Protection Register:  
64 unique device identification bits  
64 user-programmable OTP bits  
— Absolute protection with VPEN = Vss  
— Individual block locking  
— Block erase/program lockout during power  
transitions  
— 75 ns Initial Access Speed  
— 25 ns 8-word Asynchronous page-mode  
reads  
— 256-Word write buffer for x16 mode, 256-  
Byte write buffer for x8 mode;  
„ Software  
— Program and erase suspend support  
4 µs per Byte Effective programming time  
— Flash Data Integrator (FDI), Common Flash  
Interface (CFI) Compatible  
— Scalable Command Set  
„ System Voltage  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
„ Quality and Reliability  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 65 nm ETOX™ X Flash Technology  
— 56-Lead TSOP  
— 64-Ball NumonyxEasy BGA package  
208032-01  
May 2009  

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