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E28F320J3A-110 PDF预览

E28F320J3A-110

更新时间： 2024-11-30 22:33:23
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
58页 355K
描述
3 Volt Intel StrataFlash⑩ Memory

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中文翻译

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E28F320J3A-110 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：14 X 20 MM, TSOP-56
针数：56Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：8.62最长访问时间：110 ns
备用内存宽度：8命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PDSO-G56JESD-609代码：e0
长度：18.4 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：32
端子数量：56字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP56,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：4/8 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：128K最大待机电流：0.00012 A
子类别：Flash Memories最大压摆率：0.08 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPE宽度：14 mm

E28F320J3A-110 数据手册

 浏览型号E28F320J3A-110的Datasheet PDF文件第2页浏览型号E28F320J3A-110的Datasheet PDF文件第3页浏览型号E28F320J3A-110的Datasheet PDF文件第4页浏览型号E28F320J3A-110的Datasheet PDF文件第5页浏览型号E28F320J3A-110的Datasheet PDF文件第6页浏览型号E28F320J3A-110的Datasheet PDF文件第7页 
3 Volt Intel® StrataFlash™ Memory  
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)  
Preliminary Datasheet  
Product Features  
■ High-Density Symmetrically-Blocked  
Architecture  
■ Packaging  
—56-Lead TSOP Package  
®
—128 128-Kbyte Erase Blocks (128 M)  
—64 128-Kbyte Erase Blocks (64 M)  
—32 128-Kbyte Erase Blocks (32 M)  
■ High Performance Interface Asynchronous  
Page Mode Reads  
—64-Ball Intel Easy BGA Package  
■ Cross-Compatible Command Support Intel  
Basic Command Set  
—Common Flash Interface  
—Scalable Command Set  
—110/25 ns Read Access Time (32 M)  
—120/25 ns Read Access Time (64 M)  
—150/25 ns Read Access Time (128 M)  
■ 2.7 V–3.6 V VCC Operation  
■ 32-Byte Write Buffer  
—6 µs per Byte Effective Programming  
Time  
■ 12.8M Total Min. Erase Cycles (128 Mbit)  
6.4M Total Min. Erase Cycles (64 Mbit)  
3.2M Total Min. Erase Cycles (32 Mbit)  
—100K Minimum Erase Cycles per Block  
■ Automation Suspend Options  
—Block Erase Suspend to Read  
—Block Erase Suspend to Program  
—Program Suspend to Read  
■ 128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
■ Enhanced Data Protection Features  
Absolute Protection with VPEN = GND  
—Flexible Block Locking  
—Block Erase/Program Lockout during  
Power Transitions  
®
■ 0.25 µ Intel StrataFlash™ Memory  
Technology  
Capitalizing on Intel’s 0.25 µ generation two-bit-per-cell technology, second generation Intel®  
StrataFlash™ memory products provide 2X the bits in 1X the space, with new features for mainstream  
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring  
reliable, two-bit-per-cell storage technology to the flash market segment.  
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,  
support for code and data storage, and easy migration to future devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash  
memory devices take advantage of over one billion units of manufacturing experience since 1987. As a  
result, Intel StrataFlash components are ideal for code and data applications where high density and low  
cost are required. Examples include networking, telecommunications, digital set top boxes, audio  
recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, Intel StrataFlash memory components allow easy design  
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation  
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.  
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.  
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take  
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.  
Manufactured on Intel® 0.25 micron ETOX™ VI process technology, Intel StrataFlash memory provides  
the highest levels of quality and reliability.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290667-008  
April 2001  
1234567...58

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E28F320J3A-110 替代型号

型号 品牌 替代类型 描述 数据表
JS28F320J3C110 INTEL

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