Datasheet > E28F320J3C-125

E28F320J3C-125

更新时间： 2024-11-30 22:49:11

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
72页	909K
描述
Intel StrataFlash Memory (J3)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

E28F320J3C-125 数据手册

Intel StrataFlash^®Memory (J3)

256-Mbit (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

programming time

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-021

March 2005

12 3 4 5 6 7...72

中文翻译

下载PDF

与E28F320J3C-125相关器件

型号	品牌	获取价格	描述	数据表
E28F320J3C-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
E28F320J5-120	INTEL	获取价格	StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
E28F320J5A-120	INTEL	获取价格	5 Volt Intel StrataFlash® Memory
E28F320S5-110	INTEL	获取价格	WORD-WIDE FlashFile MEMORY FAMILY
E28F320S5-90	INTEL	获取价格	WORD-WIDE FlashFile MEMORY FAMILY
E28F400B5B60	INTEL	获取价格	SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5-B60	INTEL	获取价格	512KX8 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, TSOP-48
E28F400B5B80	INTEL	获取价格	SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5-B80	INTEL	获取价格	512KX8 FLASH 5V PROM, 80ns, PDSO48, 12 X 20 MM, TSOP-48
E28F400B5T60	INTEL	获取价格	SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT

与E28F320J3C-125相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

E28F320J3C-125

E28F320J3C-125 数据手册

与E28F320J3C-125相关器件

与E28F320J3C-125相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

E28F320J3C-125

E28F320J3C-125 数据手册

与E28F320J3C-125相关器件

与E28F320J3C-125相关文章

您还可以找

您在本页遇到什么问题？