5秒后页面跳转
E28F320J5A-120 PDF预览

E28F320J5A-120

更新时间: 2024-02-19 17:27:47
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
51页 620K
描述
5 Volt Intel StrataFlash® Memory

E28F320J5A-120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:14 X 20 MM, TSOP-56
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.81最长访问时间:120 ns
备用内存宽度:8命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G56JESD-609代码:e0
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:32
端子数量:56字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-20 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:16/32 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3,5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.000125 A
子类别:Flash Memories最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

E28F320J5A-120 数据手册

 浏览型号E28F320J5A-120的Datasheet PDF文件第2页浏览型号E28F320J5A-120的Datasheet PDF文件第3页浏览型号E28F320J5A-120的Datasheet PDF文件第4页浏览型号E28F320J5A-120的Datasheet PDF文件第5页浏览型号E28F320J5A-120的Datasheet PDF文件第6页浏览型号E28F320J5A-120的Datasheet PDF文件第7页 
5 Volt Intel StrataFlash® Memory  
28F320J5 and 28F640J5 (x8/x16)  
Datasheet  
Product Features  
High-Density Symmetrically-Blocked  
Cross-Compatible Command Support  
Architecture  
Intel Basic Command Set  
Common Flash Interface  
Scalable Command Set  
32-Byte Write Buffer  
64 128-Kbyte Erase Blocks (64 M)  
32 128-Kbyte Erase Blocks (32 M)  
4.5 V–5.5 V VCC Operation  
2.7 V–3.6 V and 4.5 V–5.5 V I/O  
Capable  
—6 µs per Byte Effective Programming  
Time  
120 ns Read Access Time (32 M)  
6,400,000 Total Erase Cycles (64 M)  
150 ns Read Access Time (64 M)  
3,200,000 Total Erase Cycles (32 M)  
Enhanced Data Protection Features  
100,000 Erase Cycles per Block  
Automation Suspend Options  
Block Erase Suspend to Read  
Block Erase Suspend to Program  
System Performance Enhancements  
STS Status Output  
Absolute Protection with  
VPEN = GND  
Flexible Block Locking  
Block Erase/Program Lockout during  
Power Transitions  
Industry-Standard Packaging  
Operating Temperature –20 °C to + 85 °C  
(–40 °C to +85 °C on .25 micron ETOXVI)  
process technology parts)  
SSOP Package (32, 64 M)  
TSOP Package (32 M)  
Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash® memory products provide 2Xthe bits  
in 1Xthe space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory  
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.  
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,  
support for code and data storage, and easy migration to future devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash  
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,  
Intel StrataFlash components are ideal for code or data applications where high density and low cost are  
required. Examples include networking, telecommunications, audio recording, and digital imaging.  
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.  
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take  
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.  
Manufactured on Intel’s 0.4 micron ETOX™ V process technology and Intel’s 0.25 micron ETOX VI  
process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.  
Notice: This document contains information on products in production. The specifications are  
subject to change without notice. Verify with your local Intel sales office that you have the latest  
datasheet before finalizinga design.  
Order Number: 290606-015  
April 2002  

E28F320J5A-120 替代型号

型号 品牌 替代类型 描述 数据表
E28F320J5-120 INTEL

功能相似

StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT

与E28F320J5A-120相关器件

型号 品牌 获取价格 描述 数据表
E28F320S5-110 INTEL

获取价格

WORD-WIDE FlashFile MEMORY FAMILY
E28F320S5-90 INTEL

获取价格

WORD-WIDE FlashFile MEMORY FAMILY
E28F400B5B60 INTEL

获取价格

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5-B60 INTEL

获取价格

512KX8 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, TSOP-48
E28F400B5B80 INTEL

获取价格

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5-B80 INTEL

获取价格

512KX8 FLASH 5V PROM, 80ns, PDSO48, 12 X 20 MM, TSOP-48
E28F400B5T60 INTEL

获取价格

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5T80 INTEL

获取价格

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F400B5-T80 NUMONYX

获取价格

Flash, 512KX8, 80ns, PDSO48, 12 X 20 MM, TSOP-48
E28F400BL-B150 INTEL

获取价格

4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY