Datasheet > JS28F512M29EWHA

JS28F512M29EWHA

更新时间： 2024-11-30 12:09:31

品牌	Logo	应用领域
镁光 - MICRON		闪存存储
页数	文件大小	规格书
75页	855K
描述
Parallel NOR Flash Embedded Memory

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JS28F512M29EWHA 数据手册

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx

JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx

JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx

PC28F00BM29EWxx, RC28F00BM29EWxx

• V_PP/WP# pin protection

– Protects first or last block regardless of block

protection settings

• Software protection

Features

• 2Gb = stacked device (two 1Gb die)

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

• Asynchronous random/page read

– Page size: 16 words or 32 bytes

– Page access: 25ns

– Random access: 100ns (Fortified BGA);

110ns (TSOP)

• Buffer program: 512-word program buffer

• Program time

– Volatile protection

– Nonvolatile protection

– Password protection

– Password access

• Extended memory block

– 128-word (256-byte) block for permanent, secure

identification

– Programmed or locked at the factory or by the

customer

– 0.88µs per byte (1.14 MB/s) TYP when using full

512-word buffer size in buffer program

• Memory organization

– Uniform blocks: 128-Kbytes or 64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Low power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm multilevel cell (MLC) process technology

• Fortified BGA and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Operating temperature

– Ambient: –40°C to +85°C

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block/chip erase

PDF: 09005aef849b4b09

m29ew_256mb_2gb.pdf - Rev. B 8/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...75

中文翻译

下载PDF

JS28F512M29EWHA 替代型号

型号	品牌	替代类型	描述	数据表
JS28F512M29EWLA	MICRON	完全替代	Parallel NOR Flash Embedded Memory
JS28F512M29EWHB	MICRON	完全替代	Parallel NOR Flash Embedded Memory
JS28F512P30BFA	MICRON	类似代替	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

与JS28F512M29EWHA相关器件

型号	品牌	获取价格	描述	数据表
JS28F512M29EWHB	MICRON	获取价格	Parallel NOR Flash Embedded Memory
JS28F512M29EWLA	MICRON	获取价格	Parallel NOR Flash Embedded Memory
JS28F512M29EWLB	MICRON	获取价格	Parallel NOR Flash Embedded Memory
JS28F512P30BF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30BFA	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512P30EF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30EF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30EFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

与JS28F512M29EWHA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

JS28F512M29EWHA

JS28F512M29EWHA 数据手册

JS28F512M29EWHA 替代型号

与JS28F512M29EWHA相关器件

与JS28F512M29EWHA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JS28F512M29EWHA

JS28F512M29EWHA 数据手册

JS28F512M29EWHA 替代型号

与JS28F512M29EWHA相关器件

与JS28F512M29EWHA相关文章

您还可以找

您在本页遇到什么问题？