Datasheet > JS28F512M29EWLB

JS28F512M29EWLB

更新时间： 2024-11-30 12:09:31

品牌	Logo	应用领域
镁光 - MICRON		闪存存储
页数	文件大小	规格书
75页	855K
描述
Parallel NOR Flash Embedded Memory

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数据手册
替代型号

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JS28F512M29EWLB 数据手册

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx

JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx

JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx

PC28F00BM29EWxx, RC28F00BM29EWxx

• V_PP/WP# pin protection

– Protects first or last block regardless of block

protection settings

• Software protection

Features

• 2Gb = stacked device (two 1Gb die)

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

• Asynchronous random/page read

– Page size: 16 words or 32 bytes

– Page access: 25ns

– Random access: 100ns (Fortified BGA);

110ns (TSOP)

• Buffer program: 512-word program buffer

• Program time

– Volatile protection

– Nonvolatile protection

– Password protection

– Password access

• Extended memory block

– 128-word (256-byte) block for permanent, secure

identification

– Programmed or locked at the factory or by the

customer

– 0.88µs per byte (1.14 MB/s) TYP when using full

512-word buffer size in buffer program

• Memory organization

– Uniform blocks: 128-Kbytes or 64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Low power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm multilevel cell (MLC) process technology

• Fortified BGA and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Operating temperature

– Ambient: –40°C to +85°C

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block/chip erase

PDF: 09005aef849b4b09

m29ew_256mb_2gb.pdf - Rev. B 8/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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JS28F512M29EWLB 替代型号

型号	品牌	替代类型	描述	数据表
JS28F512P30BFA	MICRON	功能相似	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512M29EWLA	MICRON	功能相似	Parallel NOR Flash Embedded Memory
JS28F512M29EWHA	MICRON	功能相似	Parallel NOR Flash Embedded Memory

与JS28F512M29EWLB相关器件

型号	品牌	获取价格	描述	数据表
JS28F512P30BF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30BFA	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512P30EF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30EF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30EFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512P30TF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30TF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30TFA	MICRON	获取价格	Numonyx Axcell P30-65nm Flash Memory

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