Datasheet > JMTG062N04D

JMTG062N04D

更新时间： 2024-11-24 14:54:27

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	727K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMTG062N04D 数据手册

JMTG062N04D

Description

JMT Dual N-channel Enhancement Mode Power MOSFET

Features

Applications

 40V, 55A

 Load Switch

_DS(ON)< 8.2mΩ @ V_GS= 10V

 PWM Application

 Power Management

R_DS(ON)< 11.2mΩ @ V_GS= 4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

100% UIS TESTED!

100% ΔVds TESTED!

Schematic Diagram

Marking and Pin Assignment

PDFN5x6-8L-D

Package Marking and Ordering Information

Per Carton

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

13" 5000

(pcs)

G062N04D

JMTG062N04D

PDFN5x6-8L-D

TAPING

50000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

T_C= 25°C

I_D

Continuous Drain Current

T_C= 100°C

Pulsed Drain Current ⁽¹⁾

Single Pulsed Avalanche Energy⁽²⁾

I_DM

E_AS

220

100

P_D

Power Dissipation

T_C= 25°C

Thermal Resistance, Junction to Ambient⁽³⁾

Thermal Resistance, Junction to Case

Junction & Storage Temperature Range

R_θJA

R_θJC

T_J, T_STG

°C/W

°C

3.4

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.2

12 3 4 5 6

中文翻译

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