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JMTG60N04B PDF预览

JMTG60N04B

更新时间: 2024-11-24 14:55:23
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 516K
描述
中压 N-ch (40V ~ 400V)

JMTG60N04B 数据手册

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JMTG60N04B  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Applications  
Features  
Load Switch  
40V, 50A  
PWM Application  
R
DS(ON) < 7.9mΩ @ VGS = 10V  
Power Management  
RDS(ON) < 11.2mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
100% UIS TESTED!  
100% ΔVds TESTED!  
D
S
G
PDFN5x6-8L  
Marking and Pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Per Carton  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
13" 5000  
(pcs)  
JMTG60N04B  
JMTG60N04B  
PDFN5x6-8L  
TAPING  
50000  
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
40  
±20  
50  
V
V
TC = 25°C  
ID  
Continuous Drain Current  
A
TC = 100°C  
32  
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy(2)  
IDM  
EAS  
200  
81  
A
mJ  
W
PD  
Power Dissipation  
TC = 25°C  
32  
Thermal Resistance, Junction to Ambient(3)  
Thermal Resistance, Junction to Case  
Junction & Storage Temperature Range  
RθJA  
RθJC  
TJ, TSTG  
37  
°C/W  
°C  
3.9  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version:1.3  

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