Datasheet > JMTG130P04A

JMTG130P04A

更新时间： 2024-11-27 14:53:23

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	415K
描述
中压 P-ch (-100V ~ -40V）

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中文翻译

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数据手册

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JMTG130P04A 数据手册

JMTG130P04A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS= -40V, I_D= -35A

 PWM Applications

 Load Switch

R_DS(ON)< 12.5mΩ @ V_GS= -10V

R_DS(ON)< 18.5mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

PDFN5x6-8L

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

JMTG130P04A

TAPING

PDFN5x6-8L

13inch

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-40

±20

Gate-Source Voltage

T_C= 25℃

-35

I_D

Continuous Drain Current

T_C= 100℃

-23

I_DM

E_AS

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

-140

121

P_D

T_C= 25℃

R_θJC

T_J, T_STG

Thermal Resistance, Junction to Case

3.3

℃/W

℃

Operating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version : 1.1

- 1 -

12 3 4 5 6

中文翻译

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