Datasheet > JMTG200C03D

JMTG200C03D

更新时间： 2023-12-06 20:10:26

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
10页	513K
描述
低压 N-ch (≤ 30V )

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JMTG200C03D 数据手册

JMTG200C03D

Description

JMT N And P-Channel Enhancement Mode MOSFET

Features

Application

 N-Channel: 30V, 11A

 Battery Protection

 Load Switch

R_DS(ON)<17mΩ @ V_GS= 10V

R_DS(ON)<28mΩ @ V_GS= 4.5V

 P-Channel: -30V, -11A

 Power Management

R_DS(ON)< 21mΩ @ V_GS= -10V

R_DS(ON)< 32mΩ @ V_GS= -4.5V

 Excellent Gate Charge x R_DS(ON)Product(FOM)

 Very Low On-resistance R_DS(ON)

 Fast Switching Speed

100% UIS TESTED!

100% ΔVds TESTED!

PDFN5x6-8L-D

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

G200C03D

JMTG200C03D

TAPING

PDFN5x6-8L-D

13inch

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max. N-Channel

Max. P-Channel

Units

V_DSS

V_GSS

±20

-30

±20

-11

-7.2

-44

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

T _C= 100℃

7.2

I_DM

E_AS

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

P_D

T_C= 25℃

7.8

R_θJC

T_J, T_STG

Thermal Resistance, Junction to Case

6.0

℃/W

℃

Operating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

12 3 4 5 6 7...10

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