Datasheet > JMTG320N10A

JMTG320N10A

更新时间： 2023-12-06 20:02:15

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	416K
描述
中压 N-ch (40V ~ 400V)

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JMTG320N10A 数据手册

JMTG320N10A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 100V, 28A

 Load Switch

R_DS(ON)<30mΩ @ V_GS= 10V

 PWM Application

 Power Management

R_DS(ON)<33.8mΩ @ V_GS= 4.5V

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead Free

100% UIS TESTED!

100% ΔVds TESTED!

PDFN5x6-8L

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(pcs)

Per Carton

(pcs)

Device Marking

Device

Outline

Package

Reel Size

G320N10A

JMTG320N10A

TAPING

PDFN5x6-8L

13”

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

100

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

I_DM

EAS

P_D

112

Single Pulsed Avalanche Energy ^note2

52.6

Power Dissipation

T_C= 25℃

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

R_θJC

2.8

℃/W

℃

T_J, T_STG

-55 to +150

JieJie Microelectronics Co., Ltd.

Version :1.1

- 1 -

12 3 4 5 6

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