Datasheet > JMTI10N10A

JMTI10N10A

更新时间： 2024-11-27 14:54:15

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	376K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JMTI10N10A 数据手册

JMTI10N10A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 100V, 10A

 Load Switch

R_DS(ON)<110mΩ @ V_GS= 10V

 PWM Application

 Power management

R_DS(ON)<140mΩ @ V_GS= 4.5V

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

TO-251-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

TUBE

(PCS)

Inner Box

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

JMTI10N10A

TUBE

TO-251-3L

4,950

29,700

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

100

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

6.5

I_DM

EAS

P_D

Single Pulsed Avalanche Energy ^note2

4.4

Power Dissipation

T_C= 25℃

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

R_θJC

6.3

℃/W

℃

T_J, T_STG

-55 to +175

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6

中文翻译

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