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JMTG100N03A PDF预览

JMTG100N03A

更新时间: 2024-11-27 14:52:31
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 628K
描述
低压 N-ch (≤ 30V )

JMTG100N03A 数据手册

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JMTG100N03A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Applications  
Load Switch  
30V, 30A  
PWM Application  
Power Management  
RDS(ON) < 9.8mΩ @ VGS = 10V  
RDS(ON) < 14.3mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
100% UIS TESTED!  
100% ΔVds TESTED!  
D
S
G
PDFN5x6-8L  
Schematic Diagram  
Marking and Pin Assignment  
Package Marking and Ordering Information  
Per Carton  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
13" 5000  
(pcs)  
G100N03A  
JMTG100N03A  
PDFN5x6-8L  
TAPING  
50000  
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±20  
30  
V
V
TC = 25°C  
ID  
Continuous Drain Current  
A
TC = 100°C  
19  
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy(2)  
IDM  
EAS  
120  
36  
A
mJ  
W
PD  
Power Dissipation  
TC = 25°C  
57  
Thermal Resistance, Junction to Ambient(3)  
Thermal Resistance, Junction to Case  
Junction & Storage Temperature Range  
RθJA  
RθJC  
TJ, TSTG  
34  
°C/W  
°C  
2.2  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.3  

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