Datasheet > JMTG100N06D

JMTG100N06D

更新时间： 2023-12-06 20:10:13

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	328K
描述
中压 N-ch (40V ~ 400V)

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JMTG100N06D 数据手册

JMTG100N06D

Description

JMT Dual N-channel Enhancement Mode Power MOSFET

Features

Application

 60V, 50A

 Load Switch

R_DS(ON)<12mΩ @ V_GS= 10V

 PWM Application

 Power management

R_DS(ON)<16mΩ @ V_GS= 4.5V

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

PDFN5X6-8L(Dual)

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

G100N06D

JMTG100N06D

TAPING

PDFN5X6-8L

13inch

2500

25000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

T_C= 100℃

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

I_DM

E_AS

200

100

P_D

T_C= 25℃

Thermal Resistance, Junction to Case

R_θJC

2.5

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

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