Datasheet > JDV2S01E-07

JDV2S01E-07

更新时间： 2024-10-29 02:50:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	127K
描述
Silicon Epitaxial Planar Type VCO for UHF band

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中文翻译

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数据手册

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JDV2S01E-07 数据手册

JDV2S01E

TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S01E

VCO for UHF band

Unit: mm

•

Small Package

High Capacitance Ratio: C /C = 2.0 (typ.)

1V 4V

Low Series Resistance: r = 0.5 Ω (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

―

JEITA

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

Weight: 0.0014 g

1-1G1A

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

= 10 V

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

⎯

2.85

1.35

1.8

⎯

3.15

1.57

3.45

1.81

⎯

Capacitance

Capacitance ratio

Series resistance

1V 4V

⎯

= 1 V, f = 470 MHz

0.5

0.7

Note: Signal level when capacitance is measured. V = 100 mV

sig

rms

Marking

F A

2007-11-01

12 3

中文翻译

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