Datasheet > JANTXV2N4235

JANTXV2N4235

更新时间： 2024-11-26 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
13页	47K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| TO-5

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JANTXV2N4235 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation process conversion

measures necessary to comply with this

revision shall be completed by 2 February 1999

INCH-POUND

MIL-PRF-19500/580A

2 November 1998

SUPERSEDING

MIL-S-19500/580

23 April 1990

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER,

TYPES 2N4234, 2N4335 AND 2N4236 JAN, JANTX AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP , silicon, amplifier transistor. Three levels of product

assurance are provided for each device type as specified in MIL-PRF-19500

1.2 Physical dimensions. See figure 1, TO-39.

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

CBO

CEO

EBO

and T

STG

= +25°C T = +25°C

V dc

A dc

°C

2N4234

2N4235

2N4236

1.0

6.0

7.0

1.0

0.5

-65 to +200

1/ Derate linearly 5.7 mW/°C for T > +25°C;

1/ Derate linearly 34mW/°C for T > +25°C;

1.4 Primary electrical characteristics at T = +25°C.

at V

CE = 1.0 V dc 1/

CE(sat)1 1/

BE(sat)2 1/

C = 1.0 A dc

f = 10 MHz

obo

f = 100 kHz

Limits

qJC

C = 1.0 A dc

max

B = 0.1 A dc

FE3

B = 0.1 A dc

CE = 10 V dc CB = 10 V dc

FE1

FE2

= 100 mA dc I = 250 mA dc I = 500 mA dc

C C

CE = 100 mA dc

E = 0

°C

V dc

1.5

Min

Max

150

3.0

100

0.6

1/ Pulsed, see 4.5.1.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...13

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与JANTXV2N4235相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N4236	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-5
JANTXV2N4237	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 1A I(C) \| TO-5
JANTXV2N4238	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 1A I(C) \| TO-5
JANTXV2N4239	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C) \| TO-5
JANTXV2N4261	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 30MA I(C) \| TO-72
JANTXV2N4261UB	ETC	获取价格	BJT
JANTXV2N4399	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 30A I(C) \| TO-3
JANTXV2N4416A	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4416AUB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Junction FET, CE
JANTXV2N4449	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-46,

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