是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.71 | 外壳连接: | GATE |
配置: | SINGLE | 最小漏源击穿电压: | 40 V |
最大漏源导通电阻: | 60 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 8 pF | JEDEC-95代码: | TO-206AA |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.36 W |
认证状态: | Not Qualified | 参考标准: | MILITARY STANDARD (USA) |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N4858UB | MICROSEMI |
获取价格 |
暂无描述 |
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JANTXV2N4859 | MICROSEMI |
获取价格 |
N-CHANNEL J-FET |
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JANTXV2N4859UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU |
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JANTXV2N4860 | MICROSEMI |
获取价格 |
N-CHANNEL J-FET |
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JANTXV2N4860UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU |
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JANTXV2N4861 | MICROSEMI |
获取价格 |
N-CHANNEL J-FET |
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JANTXV2N4861UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU |
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JANTXV2N4865 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 |
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JANTXV2N4930 | ETC |
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TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39 |
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JANTXV2N4930U4 | MICROSEMI |
获取价格 |
Transistor |
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